J. Tonfat, F. L. Kastensmidt, L. Artola, G. Hubert, N. H. Medina, N. Added, V. A. P. Aguiar, F. Aguirre, E. L. A. Macchione, M. A. G. Silveira

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 64, NO. 8, AUGUST 2017

17/07/2017

Abstract

This paper shows the impact of low linear energy transfer heavy ions on the reliability of 28-nm Bulk static random access memory (RAM) cells from Artix-7 field-programmable gate array. Irradiation tests on the ground showed significant differences in the multiple bit upset cross section of configuration RAM and block RAM memory cells under various angles of incidence and rotation of the device. Experimental data are analyzed at transistor level by using the single-event effect prediction tool called multiscale single-event phenomenon prediction platform coupled with SPICE simulations.

10.1109/TNS.2017.2727479