Alexis C. Vilas Boas, M. A. A. de Melo, R. B. B. Santos, R. Giacomini, N. H. Medina, L. E. Seixas, S. Finco, F. R Palomo, A. Romero-Maestro, Marcilei A. Guazzelli

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

01/09/2019

Abstract

The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias-condition. Switching tests were performed before, during and after irradiation. The devices were characterized at temperatures ranging from −50°C to +75°C. The results indicate that the GaN-technology is a great candidate to be used in harsh environments.

10.1109/RADECS47380.2019.9745697