J. Oliveira, M. A. Guazzelli, M. A. Assis, R. Giacomini

IEEE 19th Latin-American Test Symposium (LATS), pag 1-3. 26/04/2018

26/04/2018

Abstract

This work addresses the simulation of a commercial p-channel MOSFET (3N163) using Sentaurus TCAD tool to observe the behavior of this device operating under heavy-ion environment, in order to study Single Event Effect (SEE) mechanisms and its effects. The simulated results were used to understand experimental data collected on field and make a comparison between real and simulated data. It also allowed interpretation of experimental data, as well as elimination of spurious noises and artifacts, which are not related to SEE effects, but are imposed by environment and experimental facilities.

10.1109/LATW.2018.8349693