S. G. ALBERTON, N. H. MEDINA, N. ADDED, V. A. P. AGUIAR, R. MENEGASSO, E. L. A. MACCHIONE , M. A. G. SILVEIRA

JOURNAL OF PHYSICS. CONFERENCE SERIES

13/08/2019

Abstract

Abstract MOSFETs are subject to different types of Single-Event Effects (SEEs) induced by heavy ions, with low-voltage MOSFETs being more susceptible to non-destructive effects, such as Single-Event Transients, than high-voltage MOSFETs which may also be susceptible to destructive effects. In this paper an experimental setup used to study SEEs in power MOSFETs at the S˜ao Paulo 8UD Pelletron accelerator and computational simulations for SEE cross section calculations in low-voltage MOSFETs are presented.

10.1088/1742-6596/1291/1/012045