Paulo R. Garcia, Guilherme I Grandesi, Alexis V. Boas, Renato Giacomini, R. B. B. Santos, L. E. Seixas, Marcilei A. Guazzelli

2023 37th Symposium on Microelectronics Technology and Devices (SBMicro)

28/08/2023

Abstract

The current study aims to investigate the Total Ionizing Dose (TID) Effects on ELT MOSFET layouts and rectangular gate geometry MOSFET and compare their respective tolerance to TID. The objective of this research is to determine whether the ELT Layout offers improved TID tolerance compared to a rectangular MOSFET for the X-Ray radiation. The DUTs (Device Under Tests) were submitted to a total accumulated dose of 300 krad(Si) of 10 keV X-rays. The behavior of the devices under the referred irradiation conditions suggests that, for the threshold voltage and leakage current parameters, the ELT layout does not exhibit greater TID tolerance compared to a rectangular gate geometry device.

10.1109/SBMicro60499.2023.10302587