V. A. P. Aguiar, N. H. Medina, N. Added, E. L. A. Macchione, S. G. Alberton, C. L. Rodrigues, T. F. Silva, G. S. Zahn, F. A. Genezini, M. Moralles, F. Benevenuti, M. A. Guazzelli

JOURNAL OF PHYSICS. CONFERENCE SERIES

13/08/2019

Abstract

Abstract In this work, we present the first results of static tests in a 28nm SRAM under thermal neutron irradiation from the IPEN/IEA-R1 research reactor. The SRAM used was the configuration memory of a Xilinx Zynq-7000 FPGA and the ECC frame was used to detect bit-flips. It was obtained a SEU cross-section of 9.2(21) × 10−16 cm 2 /bit, corresponding to a FIT/Mb of 12(5), in accordance with expected results. The most probable cause of SEU in this device are 10 B contamination on tungsten contacts.

10.1088/1742-6596/1291/1/012025