A.C.V. Bôas, S.G. Alberton, M.A.A. de Melo, R.B.B. Santos, R.C. Giacomini, N.H. Medina, L.E. Seixas, S. Finco, F.R. Palomo, M. A. Guazzelli

Journal of Physics: Conference Series

01/09/2022

Abstract

Gallium nitride commercial transistors (GaN FET) are great candidates as power devices tolerant to the effects of Total ionizing dose (TID). Therefore, we have evaluated its robustness by analysing parameters in its characteristic parameters. Devices were exposed to a 10 keV X-ray source accumulating a total of 350 krad(Si). However, results indicate that the tested components are more tolerant to the effects of TID when in on-state mode rather than the off-mode, that is, when the device is working, which is good news for COTS applications in environments subject to the effects of ionizing radiation.

10.1088/1742-6596/2340/1/012045