10 de outubro de 2023 | Publicações
S G Alberton, A C V Bôas, N H Medina, M A Guazzelli, V A P Aguiar, N Added, C A Federico, O L Gonçalez, T C Cavalcante, E C F Pereira Junior, R G Vaz
Journal of Physics: Conference Series
01/09/2022
Abstract
Ground level electronics and avionics systems may suffer from radiation effects induced by neutrons. Neutrons can induce radiation effects in electronic devices via fusion-evaporation nuclear reactions, but few studies have been reported for technologies such as UMOSFET. In this work, estimates and experimental studies on neutron-induced radiation effects via nuclear reactions in a Si-based UMOSFET are presented. Methods for probability estimates of neutron-induced Single-Event Effects (SEEs) in Si-based power transistors and neutron beam energy measurement is presented. The energy spectrum of a UMOSFET subject to fast neutron irradiation was then compared to that of a high charge collection efficiency silicon particle detector.